STB13N60M2 mosfet equivalent, n-channel mosfet.
Order code
VDS at TJ max.
RDS(on) max.
ID
STB13N60M2
650 V
380 mΩ
11 A
* Extremely low gate charge
*
Excellent output capacitance (Coss) profile
*.
* Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3).
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3)
technology. Thanks to its strip layout and an improved vertical structure, the device
AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, render.
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