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ST50V10100 - RF Power LDMOS transistor

Description

The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz.

It can be used in class A/AB and C for all typical modulation formats.

Features

  • Order code FREQ VDD POUT (typ. ) Gain ST50V10100 1000 MHz 50 V 100 W 18 dB.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate/source voltage range.
  • In compliance with the European Directive 2002/95/EC ND 60%.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST50V10100 Datasheet RF Power LDMOS transistor for frequencies up to 1.5 GHz M243 Epoxy sealed 1 1. Drain 2. Gate 3. Source 2 3 GADG310120180952IG Features Order code FREQ VDD POUT (typ.) Gain ST50V10100 1000 MHz 50 V 100 W 18 dB • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate/source voltage range • In compliance with the European Directive 2002/95/EC ND 60% Applications • Industrial, scientific and medical from HF to 1.5 GHz • Avionics Description The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz.