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ST50V10200 - RF power LDMOS transistor

Description

The ST50V10200 is a common-source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz.

It can be used in A/AB and C classes for all typical modulation formats.

Features

  • Order code FREQ VDD POUT (typ. ) Gain ST50V10200 1000 MHz 50 V 200 W 18 dB.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate/source voltage range.
  • In compliance with the European Directive 2002/95/EC ND 60%.

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Other Datasheets by STMicroelectronics

Part Number Description
ST50V10100 RF Power LDMOS transistor

Full PDF Text Transcription

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ST50V10200 Datasheet RF power LDMOS transistor for frequencies up to 1.5 GHz M246 12 1-2 Drain 4-5 Gate 5 3 4 3 Source Features Order code FREQ VDD POUT (typ.) Gain ST50V10200 1000 MHz 50 V 200 W 18 dB • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate/source voltage range • In compliance with the European Directive 2002/95/EC ND 60% Applications • Broadband communications • Industrial, scientific and medical (ISM) • Avionics Description The ST50V10200 is a common-source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.
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