SCTWA70N120G2V mosfet equivalent, silicon carbide power mosfet.
Order code
VDS
RDS(on) typ.
ID
SCTWA70N120G2V
1200 V
21 mΩ
91 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacit.
* Switching mode power supply
* DC-DC converters
* Industrial motor control
G(1) S(3)
AM01475v1_noZen
Des.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of .
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