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SCTHC250N120G3AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

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Datasheet Details

Part number: SCTHC250N120G3AG
Manufacturer: STMicroelectronics ↗
File Size: 963.84 KB
Datasheet: SCTHC250N120G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

SCTHC250N120G3AG Product details

Description

This silicon carbide Power.

Features

1 4 32 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) 23.
1.
Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (TJ = 200 °C) Source sensing pin for increased effic.

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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