SCTHC250N120G3AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK high creepage package Features 1 4 STPAK high creepage Drain(4) Gate(3) Driver source(2) Power source(1) - 1 - - - - - - - - Order code SCTHC250N120G3AG VDS 1200 V RDS(on) typ. 8.5 mΩ AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (TJ = 200 °C) Source sensing pin for increased efficiency Low thermal resistance multi sintering package 7.3 mm minimum creepage (including 0.6 mm particles) 1020 Vrms PD2 Application - Main inverter (electric traction) ID 239 A NG3DS2PS1D4 Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device Features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCTHC250N120G3AG Product summary Order code SCTHC250N120G3AG Marking HC25N120G3AG Package STPAK high creepage Packing...