* Very tight variation of on-resistance vs. temperature
* Very high operating junction temperature capability (TJ = 200 °C)
* Very fast and robust intrinsic b.

* Solar inverters, UPS
* Motor drives
* High voltage DC-DC converters
* Switch mode power supplies G(1).

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.

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