SCT20N120AG Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, bined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard...
SCT20N120AG Key Features
- AEC-Q101 qualified
- Very tight variation of on-resistance vs. temperature
- Very high operating temperature capability (TJ = 200 °C)
- Very fast and robust intrinsic body diode
- Low capacitance