HiP247 3 2 1 D(2, TAB)
* AEC-Q101 qualified
* Very tight variation of on-resistance vs. temperature
* Very high operating temperature capability (TJ = 200.

* Motor drives
* EV chargers
* High voltage DC-DC converters
* Switch mode power supplies G(1) S(3) AM.

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The.

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