RF power transistor - LdmoST family
■ Excellent thermal stability
■ Common source configuration
■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
■ BeO free package
■ ESD protection
■ In compliance with the 2002/95/EC european
The PD20015C is a common source
N-channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 2 GHz.
PD20015C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
PD20015C’s superior linearity performance
makes it an ideal solution for mobile application.
Figure 1. Pin connection
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.