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PD20010-E - RF Power Transistor

ST Microelectronics

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Datasheet Details

Part number	PD20010-E
Manufacturer	STMicroelectronics
File Size	280.01 KB
Description	RF Power Transistor
Datasheet	PD20010-E_STMicroelectronics.pdf

PD20010-E Product details

Description

The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.

Features

Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

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Published: Jun 10, 2009 |