P11NM50N datasheet, stp11nm50n equivalent, STMicroelectronics

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Features and benefits

Order codes STD11NM50N STF11NM50N STP11NM50N VDSS @TJmax RDS(on) max 550 V < 0.47 Ω ID 8.5 A
* 100% avalanche tested
* Low input capacitance and gate charg.

Application

Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET a.

Description

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is theref.

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