* 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V
* Low Gate Charge (typical 43 nC)
* Low Crss (typical 20pF)
* Fast Switching
* 100% Avalanche Tested
* Im.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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