Datasheet4U Logo Datasheet4U.com

M36P0R9070E0 - Multi-Chip Package

Description

.

.

.

.

.

Features

  • summary.
  • Multi-chip package.
  • 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory.
  • 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage.
  • VDDF = VCCP = VDDQ = 1.7 to 1.95V.
  • VPPF = 9V for fast program (12V tolerant) Electronic signature.
  • Manufacturer Code: 20h.
  • Device Code: 8819 Package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M36P0R9070E0 512 Mbit Flash memory 128 Mbit (Burst) PSRAM Numonyx
M36P0R9060E0 512 Mbit Flash memory 64 Mbit (Burst) PSRAM Numonyx
M36P0R9060N0 512 Mbit Flash memory 64 Mbit (Burst) PSRAM Numonyx
M36P0R8070E0 256 Mbit Flash memory 128 Mbit (burst) PSRAM Numonyx
M36000 ROM SGS

Other Datasheets by STMicroelectronics

Part Number Description
M36P0R9060E0 Multi-Chip Package
M36DR232 32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory
M36DR432A 32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory
M36DR432B 32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory
M36DR432C 32-Mbit 2Mb x16 / Dual Bank / Page Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com M36P0R9070E0 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.
Published: |