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M36P0R8070E0 - 256 Mbit Flash memory 128 Mbit (burst) PSRAM

General Description

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Key Features

  • Multichip package.
  • 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory.
  • 1 die of 128 Mbit (8 Mb x16) PSRAM Supply voltage.
  • VDDF = VCCP = VDDQ = 1.7 to 1.95 V.
  • VPPF = 9 V for fast program (12 V tolerant) Electronic signature.
  • Manufacturer code: 20h.
  • Device code: 8818 Package.

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Datasheet Details

Part number M36P0R8070E0
Manufacturer Numonyx
File Size 645.84 KB
Description 256 Mbit Flash memory 128 Mbit (burst) PSRAM
Datasheet download datasheet M36P0R8070E0 Datasheet

Full PDF Text Transcription for M36P0R8070E0 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for M36P0R8070E0. For precise diagrams, and layout, please refer to the original PDF.

M36P0R8070E0 256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features ■ Multichip package – 1 die of...

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.8 V supply, multichip package Features ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM Supply voltage – VDDF = VCCP = VDDQ = 1.7 to 1.

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