* Improved Eoff at elevated temperature
* Minimal tail current
* Low conduction losses Applications
* Welding
* High frequency converters
* Power .

* Welding
* High frequency converters
* Power factor correction Description This Ultrafast IGBT is developed.

This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts