GF7NB60SL igbt equivalent, igbt.
TYPE
VCES VCE(sat) (Max)
IC
@25°C
@100°C
STGF7NB60SL 600 V
< 1.6 V
7A
s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE .
(<1kHz).
Figure 1: Package
3 2 1
Figure 2: Internal Schematic Diagram
APPLICATIONS s LIGHT DIMMER
s STATIC RELAYS
Tab.
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum .
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