GF100N30
GF100N30 is IGBT manufactured by STMicroelectronics.
STGF100N30 STGP100N30, STGW100N30
90 A
- 330 V
- fast IGBT
Features
- Optimized for sustain and energy recovery circuits in PDP applications.
- State-of-the-art STrip FET™ technology
- Peak collector current IRP = 330 A @
TC = 25 °C (see Table 2)
3 2 1
TO-220FP
3 2 1
TO-247
- Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency
)- High repetitive peak current capability ct(s Description du Advanced high-density and high-current IGBT rotechnology with low-drop panion diode Padapted to various functions in PDP sets.
3 2 1
TO-220
Figure 1. Internal schematic diagram lete Product(s)
- Obsolete Table 1. Device summary so Order codes
Ob STGF100N30
Marking GF100N30
Package TO-220FP
Packaging Tube
STGP100N30
GP100N30
TO-220
Tube
STGW100N30
GW100N30
TO-247...
