* Low on-voltage drop (VCE(sat))
* Low Cres / Cies ratio (no cross conduction susceptibility)
* Short circuit withstand time 10 µs
* IGBT co-packaged with.

* High frequency inverters
* Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process result.

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet − production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram.

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