GD18N40LZ datasheet, igbt equivalent, STMicroelectronics

Features and benefits

* Designed for automotive applications and AEC-Q101 qualified
* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
* ESD gate-emitter protection
* Gate-co.

Application

and AEC-Q101 qualified
* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
* ESD gate-emitter protection
* .

Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low .

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