GB20V60DF igbt equivalent, igbt.
* Maximum junction temperature: TJ = 175 °C
* Very high speed switching series
* Tail-less switching off
* Low saturation voltage: VCE(sat) = 1.8 V (typ.).
* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction
* Very h.
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficie.
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