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ESDALC6V1C2 Datasheet

Quad low capacitance TRANSIL array

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ESDALC6V1C2
Quad low capacitance TRANSIL™ array for ESD protection
Applications
Where transient overvoltage protection in ESD
sensitive equipment is required, such as:
Computers
Printers
www.DataSheCeot4mU.mcoumnication systems and cellular phones
Video equipment
This device is particularly adapted to the
protection of symmetrical signals
Features
4 unidirectional TRANSIL functions.
Breakdown voltage VBR = 6.1 V min.
– Low diode capacitance (12 pF @ 0 V)
– Low leakage current (< 500 nA @ 3 V)
– very small PCB area (1.33 mm2)
Coated lead free package
Benefits
High ESD protection level
High integration
Suitable for high density boards
Description
The ESDALC6V1C2 is a monolithic array
designed to protect up to 4 lines againast ESD
transients. The device is ideal for applications
where both reduced line capacitance and board
space saving are required.
TM: TRANSIL is a trademark of STMicroelectronics
Coated lead free Flip-Chip
(5 bumps)
Functional diagram
A1 A3 C1
C3
B2
AB C
1
2
3
Order code
Part number
ESDALC6V1C2
Marking
ED
Complies with the following standards:
IEC 61000-4-2 15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883E - Method 3015-7: class 3
25 kV (Human body model)
August 2006
Rev 1
1/7
www.st.com


STMicroelectronics Electronic Components Datasheet

ESDALC6V1C2 Datasheet

Quad low capacitance TRANSIL array

No Preview Available !

Characteristics
1 Characteristics
ESDALC6V1C2
Table 1. Absolute maximum ratings (Tamb = 25° C)
Symbol
Parameter
IEC 61000-4-2 air discharge
VPP ESD discharge IEC 61000-4-2 contact discharge
PPP Peak pulse power dissipation (8/20 µs. (1) Tj initial = Tamb
Tj Junction temperature
Tstg Storage temperature
TL Maximum lead temperature for soldering during 10 s at 5 mm for case
www.DataSheeTt4OUP.com Operating temperature range
1. For a surge greater than the maximum values, the diode will fail in short-circuit
Table 2.
Synbol
Rth(j-a)
Thermal resistance
Parameter
Junction to ambient on printed circuit on recommended pad layout
Table 3. Electrical characteristics
Symbol
Parameter
VRM
Stand-of voltage
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current @ VRM
IPP Peak pulse current
αT Voltage temperature coefficient
VF Forward voltage drop
Value
± 15
±8
25
125
- 55 to +150
260
- 40 to + 125
Value
150
Unit
kV
W
°C
°C
°C
°C
Unit
°C/W
Type
IRM @ VRM
µA max
V
ESDALC6V1C2 0.5
3
Vmin
6.1
VBR @ IR
Vmax
7.2
mA
1
RD αT
C
Typ 10-4/°C max pFtyp @0 V
15
12
2/7


Part Number ESDALC6V1C2
Description Quad low capacitance TRANSIL array
Maker STMicroelectronics
Total Page 7 Pages
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