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DB-55008L-318 Datasheet, ST Microelectronics

DB-55008L-318 mosfets equivalent, rf power amplifier using 1 x pd55008l-e n-channel enhancement-mode lateral mosfets.

DB-55008L-318 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 538.96KB)

DB-55008L-318 Datasheet
DB-55008L-318
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 538.96KB)

DB-55008L-318 Datasheet

Features and benefits


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* Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficie.

Application

Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1.

Description

The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February.

Image gallery

DB-55008L-318 Page 1 DB-55008L-318 Page 2 DB-55008L-318 Page 3

TAGS

DB-55008L-318
power
amplifier
using
PD55008L-E
N-channel
enhancement-mode
lateral
MOSFETs
ST Microelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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