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DB-55015-490 Datasheet, ST Microelectronics

DB-55015-490 mosfets equivalent, rf power amplifier using 1 x pd55015-e n-channel enhancement-mode lateral mosfets.

DB-55015-490 Avg. rating / M : 1.0 rating-12

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DB-55015-490 Datasheet

Features and benefits


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* Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Output power: 15 W Power gain: 13.5 ± 0.7 dB .

Application

Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55015-490 March 2009 Rev 1 1/.

Description

The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55015-490 March.

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TAGS

DB-55015-490
power
amplifier
using
PD55015-E
N-channel
enhancement-mode
lateral
MOSFETs
DB-55015-165
DB-55003L-175
DB-55003L-512
ST Microelectronics

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