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STMicroelectronics Electronic Components Datasheet

BV32G Datasheet

High voltage fast-switching NPN power transistor

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STBV32
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
Compact fluorescent lamps (CFLS)
SMPS for battery charger
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV32G and STBV32G-AP are supplied
using halogen-free molding compound.
TO-92
TO-92AP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STBV32
STBV32G
STBV32-AP
STBV32G-AP
Marking
BV32
BV32G
BV32
BV32G
Package
TO-92
TO-92
TO-92AP
TO-92AP
July 2008
Rev 8
Packaging
Bulk
Bulk
Ammopack
Ammopack
1/11
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11


STMicroelectronics Electronic Components Datasheet

BV32G Datasheet

High voltage fast-switching NPN power transistor

No Preview Available !

Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PTOT
Tstg
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Collector-base voltage (IC = 0, IB = 0.5A, tP < 10 ms)
Collector current
(f 100 Hz, duty-cycle 50%, TC = 25 °C)
Collector peak current (tP < 5 ms)
Base current
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case__________max
STBV32
Value
700
400
V(BR)EBO
1.5
3
0.5
1.5
1.5
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
°C
Value
83.3
Unit
°C/W
2/11


Part Number BV32G
Description High voltage fast-switching NPN power transistor
Maker STMicroelectronics
Total Page 11 Pages
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