BV32G transistor equivalent, high voltage fast-switching npn power transistor.
* High voltage capability
* Low spread of dynamic parameters
* Minimum lot-to-lot spread for reliable operation
* Very high switching speed
Applications
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* Compact fluorescent lamps (CFLS)
* SMPS for battery charger
Description
The device is manufactured using high .
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the.
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