Datasheet4U Logo Datasheet4U.com

BUX77ESY - Hi-Rel PNP bipolar transistor

Download the BUX77ESY datasheet PDF. This datasheet also covers the BUX77HR variant, as both devices belong to the same hi-rel pnp bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The BUX77HR is a silicon planar epitaxial NPN transistor in TO-257 package.

It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-016 specification.

Key Features

  • BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range.
  • 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. TO-257 Internal schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUX77HR_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BUX77ESY BUX77HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range ■ ■ ■ ■ ■ 80 V 5A > 70 -65°C to +200°C 2 31 Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. TO-257 Internal schematic diagram Description The BUX77HR is a silicon planar epitaxial NPN transistor in TO-257 package. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5203-016 specification. In case of conflict between this datasheet and ESCC detailed specification, the www.DataSheet4U.com latter prevails. Table 1.