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BUX77 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

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Datasheet Details

Part number BUX77
Manufacturer Seme LAB
File Size 87.58 KB
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 • High Power • Hermetic TO-66 Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 5A IB Base Current 0.8A PD Total Power Dissipation at TC = 25°C 40W Derate Above 25°C 0.23W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 4.
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