BULT3N4 transistor equivalent, power bipolar medium voltage fast-switching npn power transistor.
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Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed
Application
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Electronic ballast for .
NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENV.
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining t.
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