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BULT3N4 - Power Bipolar Medium voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Key Features

  • Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed.

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Datasheet Details

Part number BULT3N4
Manufacturer STMicroelectronics
File Size 173.62 KB
Description Power Bipolar Medium voltage fast-switching NPN power transistor
Datasheet download datasheet BULT3N4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BULT3N4 Medium voltage fast-switching NPN power transistor Features ■ ■ ■ Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Application ■ Electronic ballast for fluorescent lighting 3 2 SOT-32 1 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the BULT3P3, its complementary PNP transistor. Figure 1. Internal schematic diagram Table 1.