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AM1214-200 Datasheet

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

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AM1214-200
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 200 W MIN. WITH 7.0 dB GAIN
PRELIMINARY DATA
.400 x .500 2LFL (M205)
hermetically sealed
ORDER CODE
BRANDING
AM1214-200
1214-200
DESCRIPTION
The AM1214-200 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures, and wiil tolerate severe mismatch and over-
drive conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPAChermetic
metal/ceramic package with internal input/output
matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Parameter
Power Dissipation* (TC 100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
575
16
40
250
65 to +200
Unit
W
A
V
°C
°C
0.26
°C/W
September 1992
1/4


STMicroelectronics Electronic Components Datasheet

AM1214-200 Datasheet

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

No Preview Available !

AM1214-200
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVEBO
BVCES
ICES
hFE
IC = 50mA
IE = 30mA
IC = 50mA
VBE = 0V
VCE = 5V
IE = 0mA
IC = 0mA
VBE = 0V
VCE = 40V
IC = 500mA
DYNAMIC
S ymb o l
Test Conditions
POUT
ηc
f = 1215 — 1400MHz
f = 1215 — 1400MHz
GP f = 1215 — 1400MHz
N ot e:
Pulse Width = 150µSec
Duty Cycle = 5%
PIN = 40W
PIN = 40W
PIN = 40W
VCC = 40V
VCC = 40V
VCC = 40V
Min.
70
3.0
70
10
Va l u e
Typ. Max.
——
——
——
— 30
——
Unit
V
V
V
mA
Value
Min. Typ. Max.
200 — —
45 — —
7.0 — —
Unit
W
%
dB
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
2/4


Part Number AM1214-200
Description L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
Maker STMicroelectronics
Total Page 4 Pages
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