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AM1214-325 Datasheet

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

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AM1214-325
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 325 W MIN. WITH 6.4 dB GAIN
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1214-325
BRANDING
1214-325
DESCRIPTION
The AM1214-325 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 VSWR at rated
RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
The AM1214-325 is supplied in the BIGPACHer-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Pa ra met er
PDISS
Power Dissipation* (TC 100°C)
IC Device Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
1250
25
45
250
65 to +200
Unit
W
A
V
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.10 °C/W
September 1992
1/4


STMicroelectronics Electronic Components Datasheet

AM1214-325 Datasheet

L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

No Preview Available !

AM1214-325
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symb o l
Test Conditions
BVCBO
BVEBO
BVCES
ICES
hFE
IC = 50mA
IE = 15mA
IC = 50mA
VCE = 50V
VCE = 5V
IE = 0mA
IC = 0mA
IC = 5A
DYNAMIC
Symbol
Test Conditions
POUT
ηc
f = 1200 — 1400MHz
f = 1200 — 1400MHz
GP f = 1200 — 1400MHz
Note: Pulse Width = 13µSec
Duty Cycle = 2%
PIN = 75W
PIN = 75W
PIN = 75W
VCC = 45V
VCC = 45V
VCC = 45V
Valu e
Min. Typ. Max.
65 — —
3.0 — —
65 — —
— — 30
10 — —
Unit
V
V
V
mA
V al u e
Min. Typ. Max.
325 360 —
38 45 —
6.4 6.8 —
Uni t
W
%
dB
TYPICAL PERFORMANCE
POWER OUTPUT & EFFICIENCY
vs FREQUENCY
2/4


Part Number AM1214-325
Description L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
Maker STMicroelectronics
Total Page 4 Pages
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