AM1214-325
DESCRIPTION
The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal resistance and puterized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-325 is supplied in the BIGPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case
Symbol 1. Collector 2. Base 3. Emitter 4. Base
=
25 ° C)
Value Unit
Parameter
PDISS IC VCC TJ T STG
Power Dissipation- Device Current-
(TC ≤ 100°C)
1250 25 45 250
- 65 to +200
W A V °C °C
Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 0.10 °C/W
- Applies only to rated RF amplifier operation
September...
