9N150 mosfet equivalent, n-channel mosfet.
Type STW9N150
VDSS 1500 V
RDS(on) < 2.5 Ω
* 100% avalanche tested
* Avalanche ruggedness
* Gate charge minimized
* Very low intrinsic capacitances
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced.
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structu.
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