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9N120-E3 Datasheet, UTC

9N120-E3 mosfet equivalent, n-channel power mosfet.

9N120-E3 Avg. rating / M : 1.0 rating-12

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9N120-E3 Datasheet

Features and benefits

* RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Rugged.

Application


* FEATURES0 * RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * A.

Description

The UTC 9N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES0 * RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A * Low Reverse Transfer Cap.

Image gallery

9N120-E3 Page 1 9N120-E3 Page 2 9N120-E3 Page 3

TAGS

9N120-E3
N-CHANNEL
POWER
MOSFET
UTC

Manufacturer


UTC

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