9N120-E3
9N120-E3 is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION
The UTC 9N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
- FEATURES0
- RDS(ON) ≤ 1.8 Ω @ VGS=10V, ID=4.5A
- Low Reverse Transfer Capacitance
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
Power MOSFET
- ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9N120L-T47-T
9N120G-T47-T
Pin Assignment: G: Gate D: Drain S: Source
Package TO-247
Pin Assignment
Packing Tube
- MARKING
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QW-R205-897.b
Preliminary
Power MOSFET
- ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
Gate-Source...
