4NK100Z Datasheet, STMicroelectronics

Order code STD4NK100Z VDS 1000 V RDS(on) max. 6.8 Ω ID 2.2 A
* AEC-Q101 qualified
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic.

* Switching applications AM01476v1_tab Description This high-voltage device is a Zener-protected N-channel Power M.

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this devic.