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40N60M2 - N-Channel MOSFET

Description

technology.

Features

  • Order code STWA40N60M2 VDS 600 V RDS(on) max. 88 mΩ ID 34 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STWA40N60M2 Datasheet N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package D(2, TAB) G(1) Features Order code STWA40N60M2 VDS 600 V RDS(on) max. 88 mΩ ID 34 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC resonant converters Description S(3) AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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