Datasheet Details
| Part number | 40N03 |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 640.81 KB |
| Description | N-Channel Enhancement Mode PowerMos FET |
| Datasheet |
 40N03 Datasheet
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General Description
The SID40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Key Features
- Repetitive Avalanche Rated.
- Dynamic dv/dt Rating.
- Simple Drive Requirement.
- Fast Switching TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 5.6±0.2 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Stor.
