Type VDSS RDS(on) max ID 2N7000 ) 2N7002 60 V 60 V < 5 Ω(@10V) 0.35 A < 5 Ω(@10V) 0.20 A t(s
* Low Qg uc
* Low threshold drive rod Application te P
*.

ole Description bs This Power MOSFET is the second generation of O STMicroelectronics unique “single feature size” - s.

bs This Power MOSFET is the second generation of O STMicroelectronics unique “single feature size” - strip-based process. The resulting transistor ) shows extremely high packing density for low ont(s resistance, rugged avalanche characteristics and .

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