Order code VDS RDS(on) max. ID PTOT STP160N3LL 30 V 3.2 mΩ 120 A 136 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* .

* Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 techn.

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STP160N3LL Table 1: Device summary Marking Pac.

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