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160N4F7 - N-Channel Power MOSFET

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code V DS RDS(on) max STL160N4F7 40 V 2.5 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 120 A D(5, 6, 7, 8) 8 76 5.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL160N4F7 Datasheet N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Features Order code V DS RDS(on) max STL160N4F7 40 V 2.5 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 120 A D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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