Order codes STB155N3LH6 STD155N3LH6 VDSS 30 V RDS(on) max 3.0 mΩ 1. Current limited by package
* 100% avalanche tested
* Logic level drive ID(1) PTOT 80 A 1.

* Switching applications
* Automotive Description These devices are N-channel Power MOSFETs developed using the.

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1.

155N3H6

15-23B-R6G6BHC-A01-2T

15-24-xxxx

15-28-6066

15-28-xxxx

15-42-6008

15-UXGA

150-01J08L

150-02J08L

150-03J08L

150-04J08L

150-05J08L

150-06J08L

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