Order codes STB155N3H6 STD155N3H6 VDSS 30 V 30 V RDS(on) max < 3 mΩ < 3 mΩ ID 80 A (1) 80 A (1) 1. Limited by wire bonding
* RDS(on) * Qg industry benchmark

* Automotive Description These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ V.

These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram D (TAB or 2) G(.

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