Order codes VDSS @ TJmax RDS(on) max ID STD11NM65N STF11NM65N STFI11NM65N STP11NM65N 710 V < 0.455 Ω 11 A
* 100% avalanche tested
* Low input capacitance a.

* Switching applications Description * 6 $0Y These devices are N-channel Power MOSFETs developed usin.

* 6 $0Y These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lo.

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