Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω .

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary P.

This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge..

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