100N8F6 mosfet equivalent, n-channel power mosfet.
Order code VDS STP100N8F6 80 V
RDS(on)max. 0.009 Ω
ID 100 A
PTOT 176 W
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* L.
* Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 techn.
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STP100N8F6
Table 1: Device summary Marking 100N8.
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