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GFD

100N03 Datasheet Preview

100N03 Datasheet

MOSFET

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DESCRIPTION
The 100N03 uses advanced trench technology
And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanety of applications .
100N03
VDS
30V
RDS(ON)
ID
3.5mΩ 100A
GENERAL FEATURES
VDS = 30 V, ID = 100 A
RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ )
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stabilty and unifomity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Ordering Information
PART NUMBER PACKAGE BRAND
100N03
TO-220
OGFD
www.goford.cn TEL0755-86350980 FAX0755-86350963




GFD

100N03 Datasheet Preview

100N03 Datasheet

MOSFET

No Preview Available !

Absolute Maximum Ratings (TC=25, unless otherwise noted)
100N03
Symbol
Parameter
100N03
Units
VDS
ID
IDM
PD
VGS
EAS
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Drain Current-Continuous(Tc=100)
Pulsed Drain Current@VG=10V
Power Dissipation
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Operating Junction and Storage Temperature Range
30
100
70
400
180
± 20
350
-55 to 175
V
A
W
V
mJ
Thermal Resistance
Symbol
RθJC
Parameter
Junction-to-Case
Min. Typ. Max. Units Test Conditions
--
--
0.83
/W
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175.
OFF Characteristics TJ=25unless otherwise specified
Symbol
BVDSS
I GSS
I D SS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
30
Gate-to-Source Forward Leakage --
Zero Gate Voltage Drain Current
--
Typ.
--
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250µA
±100
1
nA VDS=0V, VGS=±20V
µA VDS=30V, VGS=0V
ON Characteristics TJ=25unless otherwise specified
Symbol
RD S(ON)
VGS(TH)
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage, Figure 12.
Min.
--
1.0
Typ.
4.0
1.5
Max Units Test Conditions
5.5 mΩ VGS=10V,ID=20A
3.0 V VDS=10V, ID=250µA
Gfs Forward Transconductance
50 --- -- S VDS=10V, ID=20A
www.goford.cn TEL0755-86350980 FAX0755-86350963


Part Number 100N03
Description MOSFET
Maker GFD
PDF Download

100N03 Datasheet PDF






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