Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
100N03
Symbol
Parameter
100N03
Units
VDS
ID
IDM
PD
VGS
EAS
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Drain Current-Continuous(Tc=100℃)
Pulsed Drain Current@VG=10V
Power Dissipation
Gate-to-Source Voltage
Single PulseAvalanche Energy (L=1mH, IAS=40A)C
Operating Junction and Storage Temperature Range
30
100
70
400
180
± 20
350
-55 to 175
V
A
W
V
mJ
℃
Thermal Resistance
Symbol
RθJC
Parameter
Junction-to-Case
Min. Typ. Max. Units Test Conditions
--
--
0.83
℃/W
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175℃.
OFF Characteristics TJ=25℃ unless otherwise specified
Symbol
BVDSS
I GSS
I D SS
Parameter
Min.
Drain-to-Source
Voltage
Breakdown
30
Gate-to-Source Forward Leakage --
Zero Gate Voltage Drain Current
--
Typ.
--
--
--
Max. Units Test Conditions
-- V VGS=0, ID=250µA
±100
1
nA VDS=0V, VGS=±20V
µA VDS=30V, VGS=0V
ON Characteristics TJ=25℃ unless otherwise specified
Symbol
RD S(ON)
VGS(TH)
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage, Figure 12.
Min.
--
1.0
Typ.
4.0
1.5
Max Units Test Conditions
5.5 mΩ VGS=10V,ID=20A
3.0 V VDS=10V, ID=250µA
Gfs Forward Transconductance
50 --- -- S VDS=10V, ID=20A
www.goford.cn TEL：0755-86350980 FAX：0755-86350963
