� VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ) � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Goo.

. 100N03 VDS 30V RDS(ON) ID 3.5mΩ 100A GENERAL FEATURES � VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Ty.

The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 100N03 VDS 30V RDS(ON) ID 3.5mΩ 100A GENERAL FEATURES � VDS = 30 V, ID = 100 A RDS(ON).

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts