Description
The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge ..
Features
- VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ).
- High density cell design for ultra low Rdson.
- Fully characterized Avalanche voltage and current.
- Good stabilty and unifomity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability
Application.
- Power switching application.
- Hard Switched and High Frequency Circuits.
- Uninterruptible Power Supply
Ordering Information
PART.