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SVF4N60MJ, SVF4N60D Datasheet - SILAN MICROELECTRONICS

SVF4N60MJ 600V N-CHANNEL MOSFET

SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance,.

SVF4N60MJ Features

* ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60DTR SVF4N60MJ SVF4N60M Package TO-220-3L TO-220F-3L TO-220F-3L TO-262-3L TO-252-2L TO-252

SVF4N60MJ, SVF4N60D Datasheet

This datasheet PDF includes multiple part numbers: SVF4N60MJ, SVF4N60D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVF4N60MJ, SVF4N60D

Manufacturer:

SILAN MICROELECTRONICS

File Size:

493.31 KB

Description:

600v n-channel mosfet.

This datasheet PDF includes multiple part numbers: SVF4N60MJ, SVF4N60D.
Please refer to the document for exact specifications by model.

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SVF4N60MJ SVF4N60D 600V N-CHANNEL MOSFET SILAN MICROELECTRONICS

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