S90N040S datasheet, mosfet equivalent, SI-TECH

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Features and benefits

█ 90V,170A,Rds(on)(typ)=4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability █ Split-Gate MOS Technology General Descriptio.

Description

This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low .

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