█ 90V,170A,Rds(on)(typ)=4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability █ Split-Gate MOS Technology General Descriptio.

This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low .

S90N040S

S90N045R

S90N045S

S90N030R

S90N030S

S90N055R

S90N055S

S9004P2CT

S9005P2CT

S9011

S9012

S9012-G

S9012-H

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts