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MMBTSA1980W
PNP Silicon Epitaxial Planar Transistor
for general small signal amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
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Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA Current Gain Group O Y G L Symbol hFE hFE hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT COB NF Min. 70 120 200 300 50 50 5 80 Max. 140 240 400 700 0.1 0.1 0.