MMBT100
PN100/PN100A/MMBT100/MMBT100A
- NPN General Purpose Amplifier
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
- This device is designed for general purpose amplifier applications at collector currents to 300m A.
- Sourced from process 10.
October 2008
1 TO-92
1. Emitter 2. Base 3. Collector Mark: PN100/PN100A
E B SOT-23
Absolute Maximum Ratings- Ta = 25°C unless otherwise noted
Symbol
VCEO VCBO VEBO IC TJ, Tstg
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature
Ratings
- Continuous
- These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
- Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Thermal Characteristics...
