SW226N mosfet equivalent, n-channel power mosfet.
* High ruggedness
* R DS(ON) (Max. 2.3 Ω)@V GS=10V
* Gate Charge (Max.18nC)
* Improved dv/dt Capability
* 100% Avalanche Tested GD S
TO-251
GD
S
TO-.
This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristi.
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