SW226N mosfet equivalent, n-channel mosfet.
* High ruggedness
* RDS(ON) (Max 2.3 Ω)@VGS=10V
* Gate Charge (Typical 30nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
1. Gate 2. Drain 3. .
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteris.
Image gallery
TAGS
Download (Size : 455.07KB)