SW10N65K mosfet equivalent, n-channel mosfet.
TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF BVDSS : 650V
* High ruggedness
* Low RDS(ON) (Typ 0.36Ω)@VGS=10V
* Low Gate Charge (Typ29nC)
* Improved .
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super junction technology of SAMWIN.
ID
: 10A
RDS(ON) :0.36 Ω
2
1 3
This technology enable the power MOSFET to have better characteristics, including fast
switching time,.
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